? semiconductor components industries, llc, 1994 october, 2016 ? rev. 6 1 publication order number: MMBTA13Lt1/d MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l darlington amplifier transistors npn silicon features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ces 30 vdc collector ? base voltage v cbo 30 vdc emitter ? base voltage v ebo 10 vdc collector current ? continuous i c 300 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. www.onsemi.com device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. MMBTA13Lt1g, sMMBTA13Lt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbta14lt1g, smmbta14lt1g sot ? 23 (pb ? free) 3,000 / tape & reel collector 3 base 1 emitter 2 sot ? 23 (to ? 236) case 318 style 6 *date code orientation and/or overbar may vary depending upon manufacturing location. 1 1x m 1x = device code x = m for MMBTA13Lt1g, sMMBTA13Lt1g x = n for mmbta14lt1g, smmbta14lt1g, t3g m = date code* = pb ? free package (note: microdot may be in either location) marking diagram smmbta14lt3g sot ? 23 (pb ? free) 10,000 / tape & reel
MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l www.onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 100 adc, v be = 0) v (br)ces 30 ? vdc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo ? 100 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo ? 100 nadc on characteristics (note 3) dc current gain (i c = 10 madc, v ce = 5.0 vdc) mmbta13, smmbta13 mmbta14, smmbta14 (i c = 100 madc, v ce = 5.0 vdc) mmbta13, smmbta13 mmbta14, smmbta14 h fe 5000 10,000 10,000 20,000 ? ? ? ? ? collector ? emitter saturation voltage (i c = 100 madc, i b = 0.1 madc) v ce(sat) ? 1.5 vdc base ? emitter on voltage (i c = 100 madc, v ce = 5.0 vdc) v be ? 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (note 4) (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) f t 125 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t = |h fe | ? f test . r s i n e n ideal transistor figure 1. transistor noise model
MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l www.onsemi.com 3 noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k ) figure 5. wideband noise figure r s , source resistance (k ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 a 10 a bandwidth = 1.0 hz i c = 1.0 ma 100 a 10 a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 a 100 a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 a 100 a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l www.onsemi.com 4 small ? signal characteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. ?on? voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0
MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l www.onsemi.com 5 figure 12. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector-emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z jc(t) = r(t) ? r jc t j(pk) - t c = p (pk) z jc(t) z ja(t) = r(t) ? r ja t j(pk) - t a = p (pk) z ja(t) 1.0 ms 100 s t c = 25 c 1.0 s design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p
MMBTA13L, sMMBTA13L, mmbta14l, smmbta14l www.onsemi.com 6 package dimensions style 6: pin 1. base 2. emitter 3. collector sot ? 23 (to ? 236) case 318 ? 08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 MMBTA13Lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ?
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